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0ISN1 NCE85H21 2N7370E3 1B43BS 0ISN1 RB010 TX715 FS2KM16A
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  features low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data case:jedec do-15,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. byv 14 byv 15 byv 16 units maximum recurrent peak reverse voltage v rrm 600 800 1000 v max imum rms v olta ge v rms 420 560 700 v maximum dc blocking voltage v dc 600 800 1000 v maximum average f orw ard rectif ied current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous f orw ard voltage @ 1.5 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. b y v 1 2 (z) - -- b y v 1 6 (z) d o - 1 5 100 70 100 byv 12 easily cleaned with freon,alcohol,isopropanol 400 280 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- +150 45 i r 300 60.0 5.0 100.0 1.3 18 voltage range: 100 --- 1000 v current: 1.5 a 400 byv 13 1.5 a f a st r e c ove r y r ec t i f i er s i f(av) the plastic material carries u/l recognition 94v-0 dimensions in millimeters www.diode.kr diode semiconductor korea
1 2 4 10 8 20 40 60 80 100 0 t j =125 8.3ms single half sine-wave 10 20 30 40 50 60 70 80 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 2 4 10 100 t j =25 pulse width=300 1 .1 1 . 0 2 4 6 10 40 20 100 60 200 4 10 20 40 1 0 0 .2 .4 2 t j =25 f=1mhz www.diode.kr diode semiconductor korea


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